An analysis of double exposure lithography options
2008
The current optical photolithography technology is approaching the physical barrier to the minimum achievable
feature size. To produce smaller devices, new resolution enhancement technologies must be developed. Double
exposure lithography has shown promise as potential pathway that is attractive because it is much cheaper than
double patterning lithography and it can be deployed on existing imaging tools. However, this technology is not
possible without the development of new materials with nonlinear response to exposure dose. The performance
of existing materials such as reversible contrast enhancement layers (rCELs) and theoretical materials such as intermediate
state two-photon (ISTP) and optical threshold layer (OTL) materials in double exposure applications
was investigated through computer simulation. All three materials yielded process windows in double exposure
mode. OTL materials showed the largest process window (DOF 0.137 μm, EL 5.06 %). ISTP materials had the
next largest process window (DOF 0.124 μm, EL 3.22 %) followed by the rCEL (0.105 μm, 0.58 %). This study
is an analysis of the feasibility of using the materials in double exposure mode.
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