Toward the β-FeSi2 p-n homo-junction structure

Abstract β-FeSi 2 thin films were prepared on various substrates, and the influence of the thermal expansion coefficient (TEC) and the softening temperature on the film quality were discussed. It was clarified that a crack-free β-FeSi 2 film could be formed on a glass material substrate with a TEC close to that of β-FeSi 2 , and when the softening point of the substrate is close to the crystal growth temperature of β-FeSi 2 . A (β-FeSi 2 )/(MoSi 2 )/(Corning 1737 glass) stacked structure without leak current was prepared to demonstrate the possibility of a MoSi 2 back electrode layer. Furthermore, the (Al-doped p -β-FeSi 2 )/(Ni-doped n -β-FeSi 2 ) homo-junction was also prepared by the vacuum evaporation and thermal diffusion method. We have succeeded in achieving current-rectification to a β-FeSi 2 thin film, although the anode current was small.