Cryotron-based random-access memory

Recent progress in the design of large capacity cryo-electric random-access memories is described. Three-wire cryo-electric memory cells and the hybrid AB system organization which utilizes coincident-current selection are examined from the standpoint of batch fabrication requirements, redundancy, electrical parameters, tolerances, and noise immunity. The advances which have been made with experimental subsystems are described in relation to previous work and are shown to place cryoelectrics as a strong contender in the achievement of a system whose capacity is 10 8 bits or larger.