Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP

Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N/sub 2//O/sub 2/=5/1 (slm) optimum mixed gas ambient. These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.