16‐1: Low‐Power Oxide‐Semiconductor Display System

Yoshiyuki Kurokawa,Hitoshi Kunitake,Shintaro Harada,Fumika Akasawa,Yuki Okamoto,Takashi Nakagawa,Takeshi Aoki,Seiichi Yoneda,Hiroki Inoue,Munehiro Kozuma,Takayuki Ikeda,Hai Biao Yao,Chi Chang Shuai,Hung Chan Lin,Shao Hui Wu,Makoto Ikeda,Shunpei Yamazaki

16‐1: Low‐Power Oxide‐Semiconductor Display System

2017

Yoshiyuki Kurokawa
Hitoshi Kunitake
Shintaro Harada
Fumika Akasawa
Yuki Okamoto
Takashi Nakagawa
Takeshi Aoki
Seiichi Yoneda
Hiroki Inoue
Munehiro Kozuma
Takayuki Ikeda
Hai Biao Yao
Chi Chang Shuai
Hung Chan Lin
Shao Hui Wu
Makoto Ikeda
Shunpei Yamazaki

An oxide semiconductor (OS) display system built with normally-off devices, nonvolatile OS LSI and an OS display, is proposed. The power consumption of the system is reduced by the nonvolatile OS LSI performing power gating without vanishing setting data when the OS display is in an idling stop (IDS) mode.

Keywords:

Oxide
Power gating
Electronic engineering
Simulation
Semiconductor
Engineering
Electrical engineering
power consumption
oxide semiconductor

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