TIME-RESOLVED PHOTOLUMINESCENCE FROM INXGA1-XAS/GAAS SINGLE QUANTUM WELL

We have measured the time-resolved photoluminescence spectra of several InxGa1-xAs/GaAs single quantum well samples at 77K. The different temporal behaviors of the photoluminescence (PL) from the GaAs layer and the excitonic emission from the InxGa1-xAs well were obtained. The lifetime for the exciton in the InxGa1-xAs well were determined to be 110-170ps. The trapping efficiency of the well to the carriers was about 80%.