A 60 GHz Low Power Integrated Quasi-Circulator in 22 nm FDSOI Technology

This work presents the design and characterization of a millimeter wave integrated quasi-circulator implemented in a 22 nm fully depleted silicon on insulator technology, targeting single antenna radio frequency identification systems. The design is based on a Wilkinson power divider and a common-gate loss compensation amplifier. Characterization results show that all ports are matched to 50Ω with magnitude of input reflection coefficients better than -10 dB. The measured transmit port to antenna port insertion loss is 5.7 dB, and the antenna port to receive port gain is 2 dB. The power amplifier port to loss compensation amplifier isolation is greater than 20 dB in the 57 GHz to 63 GHz frequency range, with a maximum of 32 dB. The circuit consumes 5.4mW power and occupies an area of 0.49 mm2. To the knowledge of the authors, the design has one of the best reported combinations of isolation, power consumption and occupied area among integrated quasi-circulators.