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Aging and Gate Bias Effects on TID Sensitivity of Wide Bandgap Power Devices
Aging and Gate Bias Effects on TID Sensitivity of Wide Bandgap Power Devices
2018
Kimmo Niskanen
Antoine Touboul
Rosine Coq
Frédéric Wrobel
Frédéric Saigné
Jérôme Boch
A. Michez
Vincent Pouget
Keywords:
AND gate
Power semiconductor device
Band gap
Optoelectronics
Materials science
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