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Electrical Characterization of Free-Standing 3C-SiC(111) Substrates Grown by Gas-Source Molecular Beam Epitaxy
Electrical Characterization of Free-Standing 3C-SiC(111) Substrates Grown by Gas-Source Molecular Beam Epitaxy
2016
Yoshitaka Nakano
Hidetoshi Asamura
Sumito Oouchi
Mitsuhisa Narukawa
Toru Inagaki
Keisuke Kawamura
Keywords:
Molecular beam epitaxy
Analytical chemistry
Materials science
Optoelectronics
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