Influence of the thermal history of melts on the formation of grown-in defects in silicon

We have investigated the influence of time-dependent changes of melt properties on the formation of grown-in defects in silicon single crystals grown by the Czochralski method. It is found that the density of grown-in defects increases if the crystal is pulled immediately after melting. The results indicate that the change in the state of melts can influence the formation of grown-in defects in silicon single crystals.