Thin films of icosahedral AlMn phases; assessment of structural perfection

Abstract The icosahedral metastable AlMn phase was obtained in thin films prepared by the high temperature sequential vapor deposition method. Analysis of X-ray diffraction line profiles allows an estimate of the random phason strain, revealing the presence of a highly disordered icosahedral fraction. Its concentration is correlated with the degree of crystallographic perfection of the Al substrate. Thereby, the crucial role of Al diffusion in the formation of the icosahedral phase is evidenced.