High-performance WN-gate MISFETs fabricated from MOVPE wafers

M. Wolny,T. Aguila,P. Deconinck,D. Moroni,J.-P. Andre

High-performance WN-gate MISFETs fabricated from MOVPE wafers

1987

M. Wolny
T. Aguila
P. Deconinck
D. Moroni
J.-P. Andre

WN-gate heterojunction MISFETs with an AlGaAs layer as insulator have been fabricated on MOVPE wafers; they exhibit high transconductance (up to 460 mS/mm) and high Vt uniformity.

Keywords:

Metalorganic vapour phase epitaxy
Gallium arsenide
Transconductance
Epitaxy
Heterojunction
Electronic engineering
Mathematics
Wafer
Insulator (electricity)
Field-effect transistor
Fabrication

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