50-Gbps Receiver Subsystem using Ge/Si Avalanche Photodiode and Integrated Bypass Capacitor

A 50-Gbps receiver subsystem consisting of a Ge/Si avalanche photodiode and integrated metal-insulator-metal capacitor is presented which demonstrates 32 GHz receiver bandwidth, −16 dBm OMA sensitivity at BER of 2E-4, and 8 dBm optical overload.