Functionality and performance improvements with field-based OPC
2007
The upcoming 45nm and 32nm device generations will continue the familiar industry lithography trends of
decreased production K1 factor, reduced focus error tolerances and increased pattern density. As previous
experience has shown, small changes in the values of lithographic K1, focus tolerance and pattern density
for the process-design space can lead to large required changes in OPC and RET solutions. Therefore,
significant improvements in utility and speed are needed for these new device generations. In this paper we
highlight significant new functionality and performance capabilities using existing Field-based OPC and
RET methods. The use of dense grid calculations in Field-based methods is shown to provide a software
platform for robust and fast implementation of new model-based RET techniques such as model-based
assist feature placement and tuning. We present the performance and capability increases for model-based
RET methods. Additionally, we have studied and present the performance of production 45nm generation
field-based OPC and RET software across several different multiple-purpose hardware platforms.
Significant improvements in runtime (for approximately the same hardware cost) are observed with new
general purpose hardware platforms and with software optimization for this hardware.
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