ESTUDIO DE LA VARIACIÓN DE LA BRECHA DE ENERGÍA EN FUNCIÓN DE ALTAS TEMPERATURAS (300-750) K DE LOS SEMICONDUCTORES CUINVI 2 (S, SE, TE)

Optical absorption measurements as a function of high temperature (300 to 750)K on semiconductor direct energy gap CuInVI 2 (S, Se and Te) were performed in the visible light spectrum. These results are used to determine the value of the fundamental direct energy gap Eg as a function of temperature T, through classical theoretical models. The d Eg /dT parameter obtained in the range of high temperature in the ternary semiconductor compounds CuInS 2, CuInSe 2 and CuInTe 2 are -3.3x10