Method of preparing porous graphene film by using electrostatic spray process

The invention relates to a method of preparing a porous graphene film on the surface of a silicon wafer by using an electrostatic spray process combined with a heat treatment process of a substrate silicon wafer, and belongs to the technical field of solid film preparation processes. The method is characterized in that graphene dispersion liquid is prepared by a liquid phase ultrasound stripping method, and the graphene dispersion liquid is used as spinning liquid to prepare the porous graphene film on the surface of the substrate silicon wafer by the electrostatic spray process and a substrate heating method. The method is simple and convenient and has low requirements on equipment; and the prepared film has a porous structure, good adhesiveness with the substrate silicon wafer and a larger specific surface area, and is expected to be applied to the fields of gas sensitive sensors, lithium batteries, catalysts and the like.