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Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process
Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process
2007
Hongmei Li
Basanth Jagannathan
Jing Wang
Tai-Chi Su
S.L. Sweeney
John J. Pekarik
Yun Shi
David R. Greenberg
Zhenrong Jin
Robert A. Groves
Lawrence F. Wagner
Sebastian Csutak
Keywords:
Scaling
Optoelectronics
CMOS
Materials science
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