Semiconductor insulated gate with soft switching behavior

a semiconductor device and a method are described for producing the same. The semiconductor device comprises: a plurality of device cells each comprising a body region, a source region and a body region adjacent to the have diel and electrically by a gate dielectric over the body region insulated gate electrode; and an electrically conductive gate layer having the gate electrodes or is electrically connected to the gate electrodes of the plurality of device cells. The gate layer is electrically connected to a gate conductor and has at least one of an area with increased resistance and an area of ​​reduced resistance.