반도체 : 실리콘산화아연주석 산화물 반도체의 후열처리 온도변화에 따른 트랜지스터의 전기적 특성 연구

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (UFE) increased and threshold voltage (Vth) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in V1h and increase in on-current.