Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules

High voltage and high current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6×6mm 2 SiC chips that are fabricated on 3″ SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high voltage, high frequency applications, as well as antiparallel diodes for 6.5kV IGBTs, IGCTs, and IEGTs.