CMOS integrated infrared sensor
1997
CMOS integrated microsensors (CIMS) technology has been developed that combines bulk micromachining, pyroelectric materials and a commercial CMOS process to provide an integrated infrared sensor. This sensor system is based on a new sol-gel derived thin film fabricated on thin silicon micro electromechanical structure. The sensor has a peak responsivity of 2.33 V/W and a thermal time constant of 300 ms.
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