Noise analysis of double gate composite InAs based HEMTs for high frequency applications

The quantitative analysis of microwave noise available in the double gate (DG) high electron transistors of mobility (HEMT) is reported in this paper. For this analysis, the InGaAs/InAs/InGaAs DG-HEMT composite channel delivers an eminent low analog/RF signals and noise output. The proposed 30 nm gate length system with high Indium (x = 0.3) concentrations in the channel leads to a maximum frequency of oscillation (fmax) of 785 GHz and a cut-off frequency (fT) of about 586 GHz. Using the Green’s method in the TCAD simulator tool, the microwave noise of electrodes is characterized by spectral density under different biasing conditions are evaluated. In accordance with the equivalent noise resistant of 480Ω approximately around 586 GHz this proposed device displays a minimum noise figure (NFmin) of 1.62 dB for Vgs = 0.3 V and Vds = 0.5 V which is relative low. This study demonstrates that DG-HEMT is well suited to applications that involve low power and low noise with higher levels of indium in the channel.