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Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers
Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers
2018
Koizumi Tomoaki
Emoto Kei
Ishizaki Kenji
De Zoysa Menaka
Tanaka Yochinori
Sonoda Junichi
Noda Susumu
Keywords:
Optoelectronics
Laser diode
Laser
Metalorganic vapour phase epitaxy
Materials science
Photonic crystal
Correction
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