Intersubband absorption in /spl delta/-doped GaInAs-InP multi quantum wells

We report on intersubband absorption in lattice-matched Ga/sub 0.47/In/sub 0.53/As multi quantum well structures. Four /spl delta/-doped samples were grown by metalorganic vapour-phase epitaxy, the well-thickness varying between 5 and 11 nm. Experimental results are presented for bound-to-bound and bound-to-continuum transitions. The measured intersubband transition energies are in very good agreement with an effective-mass-approximation model including nonparabolicity effects.