Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN

Electron beam induced electromigration of ON+ and H+ impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dispersive x-ray spectrometry (WDS). The presented results (i) illustrate induced impurity diffusion in wide bandgap semiconductors, (ii) provide experimental evidence for the (VGa−ON)2− model of yellow luminescence in GaN with low Si content1, (iii) confirm the roles of O in frequently reported bound exciton and donor-acceptor pair emissions and (iv) suggest the involvement of ON+ and hydrogenated gallium vacancies in a blue emission in autodoped GaN.