Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109

Increasing the circuit density is driving the need for lower permittivity interlayer dielectrics (ILD) to reduce the capacitance between long parallel lines. JSR's LKD-5109, an MSQ-based material, is one of such low-k materials for the 65-nm node. The feasibility of integrating LKD-5109 in a single inlaid structure has been investigated. Thermal stability, chemical compatibility to stripping agents and CMP slurries are verified. A single damascene structure incorporating a dual CVD hard mask has been attempted and electrical results have been evaluated.