A method of making forced mos transistors

The invention relates to a method of producing a transistor comprising the steps of: a) forming a semiconductor layer (52) extending on an insulating layer; b) thermally oxidizing the semiconductor layer over its entire thickness according to two bars (38) extending in the direction of the transistor gate width; and c) forming isolation trenches extending in the direction of the transistor gate length, the semiconductor layer being constrained before or after step a).