Electrical conductivity of CuI-AsI3-As2Se3 and CuI-SbI3-As2Se3 chalcogenide films prepared by chemical deposition

The electrical conductivity of chalcogenide semiconductor films in the CuI-AsI3-As2Se3 and CuI-SbI3-As2Se3 systems, which have been prepared by chemical deposition from mono-n-butylamine, has been studied as a function of the temperature and film composition. It has been established that the electrical conductivity of the CuI-AsI3-As2Se3 and CuI-SbI3-As2Se3 films is predominantly determined by the copper iodide content. It has been demonstrated that the electrical properties of the chalcogenide glasses and the related films are characterized by the same values to within the experimental error, which is explained by the same model of dissolution of vitreous semiconductors in amines with the retention of the electrical properties of chalcogenide glasses after the deposition of films from their solutions.