Ruthenium and ruthenium dioxide thin films deposited by atomic layer deposition using a novel zero-valent metalorganic precursor, (ethylbenzene)(1,3-butadiene)Ru(0), and molecular oxygen

Display Omitted Ru and RuO2 films by atomic layer deposition (ALD) using a zero-valent precursor.ALD-Ru and RuO2 exhibited a perfect conformality at 25nm trench (aspect ratio: 4.5).The ALD-Ru growth rate was 0.056nm/cycle with negligible incubation cycles of ~15.The ALD-RuO2 growth rate was 0.09nm/cycle and negligible incubation cycle of ~6. Ruthenium (Ru) and ruthenium dioxide (RuO2) thin films were grown by atomic layer deposition (ALD) by applying a sequential supply of a novel zero-valent metalorganic precursor, (ethylbenzene)(1,3-butadiene)Ru(0) (EBBDRu, C12H16Ru), and molecular oxygen (O2) at a deposition temperature of 225?C. EBBDRu provided a high vapor pressure of 1.2Torr at 88?C. In the case of Ru ALD, the growth per cycle (GPC) was ~0.06nm/cycle starting with a slight incubation period of approximately 15 ALD cycles on a thermally grown silicon dioxide initial substrate. A metallic Ru film with high purity and low resistivity (~26µ?cm) was obtained at an ultra-thin thickness of ~10nm. Furthermore, RuO2 thin films were grown controllably by increasing the O2 pulsing time at a pure O2 gas flow (with no nitrogen dilution) and at a deposition temperature of 225?C. The GPC in the case of RuO2 ALD was ~0.09nm/cycle and the number of incubation cycles was as low as 6 on a SiO2 starting substrate. Both the Ru and RuO2 thin films exhibited excellent step coverage of ~100% in very narrow trenches with 4.5 aspect ratio and a 25nm top opening.