8.4L: Late-News Paper: Electrical Properties of a-IGZO Films Depending on Trap States

We investigated the photo-response of a-IGZO thin films under light illumination. The photo-response was compared before and after annealing. As the annealing temperatures increase, photo-response changes quite substantially. We explored the photo-responses of a-IGZO thin films under light illumination with various wavelengths. The photo-responses involve the photo-excitation and the dark relaxation phenomena in a-IGZO thin films. The photo-responses of samples were monitored and analyzed in terms of the trap states and oxygen vacancies. The quite large change of photo-response by the annealing was analyzed in terms of trap states and oxygen vacancies.