Chapter 431 – The Optoelectronic Properties of CdSe: Cu Photoconductive Detector

Publisher Summary The photoconductive detector CdSe:Cu is fabricated as a thin film. Doping with Cu was implemented using vacuum annealing under argon atmosphere. The structure of the prepared films was studied using both scanning electron microscope and X-ray diffractometer. The morphology results indicate that the structure of the pure CdSe thin film is amorphous and were a polycrystalline for doped CdSe in Cu content. Better crystallinity is observed for CdSe:Cu thin tilm as the Cu contents increase. Direct energy gaps of CdSe and CdSe:Cu is determined as a function of Cu doping in CdSe thin films. The photoconductivity was shown to increase with Cu doping concentrations.