Shallow thermal donors associated with H, Al and N in annealed Czochralski silicon distinguished by infrared spectroscopy

Electronic transitions of shallow thermal donors (STDs) in aluminium-doped Czochralski (CZ) Si annealed at C have different energies from those of STDs observed in annealed, hydrogenated boron-doped CZ Si. A third type of STD is observed in boron-doped Si pre-heated in nitrogen gas and annealed at C. Combinations of the three types of STDs can be observed in suitably treated samples. The incorporation of H and Al in STDs has been supported by electron - nuclear double-resonance measurements of the Si-NL10 electron paramagnetic resonance spectrum but the incorporation of nitrogen remains uncertain.