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Charge Trapping Characteristics of HfO$_{2}$ Layers for\Tunnel-barrier-engineered Nonvolatile Memory Applications
Charge Trapping Characteristics of HfO$_{2}$ Layers for\Tunnel-barrier-engineered Nonvolatile Memory Applications
2009
Kwan-Su Kim
Myung-Ho Jung
Goon Ho Park
Won Ju Cho
Jong-Wan Jung
Keywords:
Physics
Non-volatile memory
Nuclear magnetic resonance
Charge trap flash
Condensed matter physics
tunnel barrier
Trapping
Correction
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