A Proposal of High Performance and Highly Fabricable Complementary Organic Thin Film Transistor Structure

A complementary organic thin film transistor (COTFT) structure is proposed, which would make it possible to realize high performance and highly fabricable organic integrated circuits. The structure is based on single organic semiconductor layer, with high electron carrier concentration region (n+) at the n-channel OTFT source/drain contact areas, and high hole carrier concentration region (p+) at the p-channel ones. The COTFT characteristics are analyzed by an OTFT devices simulator, Toyo University Organic Thin Film Transistor Advanced Simulator (TOTAS), which makes it possible to derive drain current–drain voltage (Id–Vd) characteristics, potential distribution and electron/hole concentration distribution by solving Poisson's equation and current continuity equation. It is found that both n- and p-channel transistors exhibit almost the same Id–Vd characteristics when n+ and p+ are both 1020 cm-3, and independent of p between 1012 cm-3 and 1015 cm-3. In addition, top contact COTFT and bottom contact one also exhibit almost the same Id–Vd characteristics if the same device parameters are employed. Therefore, the COTFT structure proposed here would be quite suitable for practical applications, because of its high performance and fabricability.