Packaging Technique of Highly Integrated Circuits Based on EBG Structure for +100 GHz Applications

This work presents an on-chip packaging concept suitable for monolithic microwave integrated circuits (MMIC) operating above 100 GHz. The concept relies on using an on-chip transition that couples the signal to a standard air-filled waveguide. The proposed solution utilizes an electromagnetic band-gap (EBG) structure realized using bed of nails to prevent the propagation of parallel plate modes and improve the coupling between the MMIC and the waveguide. The technique shows an average insertion loss of only 0.6 dB across the frequency range 110 - 155 GHz. Moreover, the concept is demonstrated in a D-band amplifier circuitry that is fabricated in an indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Experimental results show that the amplifier exhibits a maximum gain of 18.5 dB with no sign of propagation of any parallel plate modes. This work presents a verified solution for packaging high-frequency integrated circuits, and hence paves the way towards higher system integration above 100 GHz.