Electrical and optical properties of ZnO (0001¯) wafers implanted with argon

The electrical and optical properties of (0001¯)-oriented ZnO wafers, implanted with argon at 230keV and dosage of 1015cm−2 have been determined to establish a baseline by which to compare these properties in similar ZnO materials implanted with other dopants. Capacitance-voltage measurements of unimplanted and implanted wafers, annealed in oxygen at 1atm at 50°C intervals between 250 and 850°C for 30min at each temperature, indicated contributions of charged point defects to the overall conductivity of the latter material. Photoluminescence data acquired at 8K of the same two material sets revealed defect bands in the implanted wafers at 2.4 and 2.25eV related to mobile point defects. The results of both studies indicated crystallographic repair of Ar-implanted ZnO commences at 400°C.