Growth of SiC films on silicon substrate by cold implantation of carbon recoil atoms

Abstract A novel method of silicon carbide growth on silicon substrates is proposed. The method makes use of carbon recoil atoms implantation from a layer of molecules of carbon-containing gas, adsorbed on a cooled silicon surface bombarded by argon ions. A silicon carbide film is formed on the surface of a Si(1 1 1) substrate after high-temperature annealing in vacuum. The film properties are studied by IR-spectroscopy, XRD, AFM and optical microscopy methods. The studies have shown that the proposed method enables the growth of single-crystalline SiC films on the Si crystal surface.