Single event effects hardening on 65 nm Flash-based field programmable gate array

The single event effects hardening and heavy-ion testing of a radiation-hardened Flash-based field programmable gate array, RTG4, are presented. The hardened logic circuits include fabric flip-flops, fabric SRAM, global clocks, PLL, and SERDES. SEL is hardened for the whole chip. Lastly, the inspace programming is hardened as the consequence of the above hardening activities. Test results show the effects of hardenings.