The kinetics of silicon dioxide chemical vapour deposition I: Surface chemical reactions

Abstract The process of SiO 2 deposition by oxidizing silane with oxygen is widely applied in manufacturing integrated circuits. However, its mechanism and kinetics are not fully understood. In this paper a general analysis of chemical vapour deposition of silicon dioxide is presented. In the first part, it is pointed out that in the case of low temperature SiO 2 deposition it is necessary to consider all process stages, i.e. diffusion, adsorption and chemical reactions. The electron structures of reagents are analysed. As a result of these studies a mechanism for the surface reactions is proposed.