Diamond pn junction diode and its manufacturing method

Abstract: realizing a pn junction by ion implantation, so that the diamond semiconductor can be used as an electronic device. A diamond pn junction 20 of the present invention It is, p-type diamond thin-film layer 21 formed on the substrate 11 When, this p-type diamond thin-film layer of high quality undoped diamond thin-film layer 22i is formed on the 21, n-type diamond thin-film layer 23 with an impurity in the high-quality undoped diamond thin-film layer 22i is formed by ion implantation, in that it comprises It is characterized.