Temperature dependence of emission wavelength in 1.3μm GaInAsP/InP GRIN SCH MQW laser diodes grown by MOCVD

1.3 mu m GaInAsP/InP GRIN SCH MQW laser diodes grown by low-pressure MOCVD were operated without mode hopping in a single longitudinal mode over a wide temperature range Delta T (5-45 degrees C). The temperature coefficient of the wavelength in this range was 0.8 AA deg-1, which was as small as that of the distributed feedback laser. At the extremes of this temperature range mode hopping occurred. The wavelength did not shift into the nearest neighbouring mode but into one which was separated by several mode spacings. An interference between the fundamental and higher-order transverse modes might be the underlying mechanism.