Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

Abstract AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal (ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse breakdown voltage (V BR ) and reducing the turn-on voltage (V ON ). Structures with various distances of p-GaN layer (L G ) were investigated using the current-voltage (I–V), reverse recovery time, and voltage stress characteristics. The SBDs fabricated with L G = 3 µm realized a lower R ON of 4.26 mΩ-cm 2 and lower V ON of 0.10 V compared with the SBDs fabricated with L G = 5 and 8 µm as well as the standard device. Moreover, the V BR of the SBDs with L G = 3, 5, and 8 µm was − 606, − 679, and − 713 V, respectively. The results indicated that the SBDs combined with a dual anode metal and a p-GaN layer have significantly improved V BR than does of standard device. The reverse recovery time and reverse recovery charge of the SBD combined with a dual anode metal and a p-GaN layer design decreased due to the low noise and traps from the p-n junction.