Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric

Abstract Two depletion-mode GaAs-based metal–oxide–semiconductor field-effect transistor (MOSFETs) were made with molecular beam epitaxy (MBE) grown Ga 2 O 3 (Gd 2 O 3 ) as the gate dielectric on different channel structures. The depletion-mode GaAs MOSFETs with a gate length of 1.6 μm show an accumulated drain current density of 335 mA/mm at V G up to 4 V. The In 0.15 Ga 0.85 As/GaAs MOSFET, with a 4-A-thick amorphous Si cap layer exhibits a large drain current density of 510 mA/mm at V G up to 2 V. The output characteristics measured by a curve tracer show no I – V hysteresis and drain current drift. These excellent device characteristics were resulted from a high-quality, low-trap interface between Ga 2 O 3 (Gd 2 O 3 ) and the channels.