Nonequilibrium Green's Function and First-Principles Approach to Modeling of Multiferroic Tunnel Junctions

Multiferroic tunnel junctions (MFTJs) have seen time in the spotlight lately, due to their high tunneling electroresistance and nonvolatility, which are appealing for digital memory devices. In this theoretical analysis of MFTJs, time-dependent perturbation theory yields the relation between ferroelectric polarization and ferromagnetic order at the ferroelectric/ferromagnetic interface. Furthermore, parameters for simulations are estimated from density functional theory and experimental results, and a comprehensive examination of tunneling electroresistance and tunneling magnetoresistance is conducted.