Analysis of dark current in Ge-on-Si photodiodes at cryogenic temperatures
2020
The dark current behavior of three different Ge waveguide photodiode designs integrated in a silicon photonics platform is investigated from 34 to 334 K. The activation energy is extracted to understand the relative contribution of Shockley-Read-Hall and trap-assisted tunneling at different temperatures and voltage biases.
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
2
Citations
NaN
KQI