Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density

We studied Au-Pd-Ti-Pd ohmic contacts made by thermal evaporation of metals in vacuum onto n -GaN (n -AlN) with high dislocation density heated to a temperature of 350 °C. Temperature dependence of ohmic contacts resistivity may be described by the mechanism of current flow through the metal shunts associated with dislocations, with allowance made for current limitation by diffusion supply of electrons to the contact. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)