A double active g m -boosted-based inductorless differential wideband low-noise amplifier

A double active g m -boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-µm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S 21 , minimal NF (with output buffer) of 3.2dB, and IIP3 of −8.9 dBm. The power consumption is 3.6mW with 1V power supply.