III-V semiconductor nanowires grown on silicon for vertical devices

In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as bipolar and field effect transistors. The main interest arises from the combination of (opto)electronic properties of III-V semiconductors with the existing silicon-based technology. A detailed structural characterization of III-V nanowires grown by laser ablation and metal-organic vapor-phaseepitaxy on silicon has been carried out by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in order to asses the epitaxial growth and the quality of the heterointerface. GaP/GaAs heterostructures and core/shell structures have also been investigated. Electrical characterization is carried out in order to determine transport properties and deduce information about the band structure of the nanowires.