${L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz

We present our latest results on ${L} _{g} = {87}$ nm InAlAs/InGaAs high-electron-mobility transistors with an excellent combination of dc and high-frequency characteristics. We obtained a maximum transconductance of 3 S/mm at ${V}_{\text{DS}} = {0.9}$ V, an ON-resistance of $273~\Omega $ - $\mu \text{m}$ , a current gain cutoff frequency of 559 GHz, and a maximum oscillation frequency of 671 GHz. According to small-signal modeling, these outstanding device metrics are a consequence of the indium-rich InGaAs channel with very high Hall mobility, compact device design with ${L} _ {\text{SD}} = {1}\,\,\mu \text{m}$ , and an optimized gate process that yields well-tempered behavior.