Characterization of CIAE developed double-sided silicon strip detector for charged particles

A double-sided silicon strip detector (DSSD) with active area of \({48\, \hbox {mm}}\times {48\, \hbox {mm}}\) and thickness of \({300\, \upmu \hbox {m}}\) has been developed. Each side of DSSD consists of 48 strips, each with width of 0.9 mm and inter-strip separation of 0.1 mm. Electrical properties and detection performances including full depletion bias voltage, reverse leakage current, rise time, energy resolution and cross talk have been studied. At a bias of 80 V, leakage current in each strip is less than 15 nA, and rise time for alpha particle at 5157 keV is approximately 15 ns on both sides. Good energy resolutions have been achieved with 0.65–0.80% for the junction strips and 0.85–1.00% for the ohmic strips. The cross talk is found to be negligible on both sides. The overall good performance of DSSD indicates its readiness for various nuclear physics experiments.